Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Circuit configuration for gentle shutoff of an MOS semiconductor component in the event of excess current

Circuit configuration for gentle shutoff of an MOS semiconductor component in the event of excess current

US Patent 5526216 · Granted Jun 11, 1996

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor component arrangement for overvoltage protection of MOSFETs and IG1997
Thermoelement comprising a graphite/boron carbide thermocouple1988
Process for the manufacture of shaped articles from reaction-bonded silicon nitr1987
Ceramic bonded neutron absorber plates of boron carbide and free carbon1987
Dense shaped articles consisting of polycrystalline hexagonal boron nitride and 1987
Shaped polycrystalline silicon carbide articles and isostatic hot-pressing proce1986
Substantially pore-free shaped articles of polycrystalline silicon carbide, and 1985
Refractory, electrically conductive, mixed materials containing boron nitride an1985
Substantially pore-free sintered polycrystalline articles of .alpha.-silicon car1985
Microwave power generator with dual coaxial lines connected to transistor1985
Dense shaped articles consisting of polycrystalline hexagonal boron nitride and 1985
Dense shaped articles of polycrystalline .alpha.-silicon carbide and process for1984