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Home › Method of making a semiconductor device with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device

Method of making a semiconductor device with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device

US Patent 5455187 · Granted Oct 3, 1995

Estimated economic value: $86,831,000 ⓘ

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