Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel

Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel

US Patent 5429956 · Granted Jul 4, 1995

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for operating a non-volatile memory2004
Method for measuring an effective channel length of a MOSFET2004
Method for forming a cantilever beam model micro-electromechanical system2004
Process for forming DRAM cell2003
Method for measuring effective gate channel length during C-V method2003
Vertical two-transistor flash memory2002
Method for forming a self-aligned silicide layer2002
High density flash memory cell2001
Method of fabricating flash memory2001
Structure and method for fabricating a field effect transistor with a self-align2001
Structure and method for fabricating a field effect transistor with a self-align2001
Flash memory structure and method of manufacture2001