Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of growth of II-VI materials on silicon using As passivation

Method of growth of II-VI materials on silicon using As passivation

US Patent 5382542 · Granted Jan 17, 1995

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Coating including silica based material with pendent functional groups2014
Method of coating a surface of a fuel cell plate2013
Method of coating a surface of a fuel cell plate2011
Fuel cell control valve2011
Pseudo low volume reticle (PLVR) design for ASIC manufacturing2010
Preparing composites by using resins2007
Erosion control device and matrix2007
Thin film metal hydride hydrogen sensor2003
Growth of low dislocation density HGCDTE detector structures1998
Epitaxial visible-light-emitting devices with light extracted through the substr1997
Production of clean, well-ordered CdTe surfaces using laser ablation1995
Multichannel plate assembly for gas source molecular beam epitaxy1993