Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench isolation with planar topography and method of fabrication

Trench isolation with planar topography and method of fabrication

US Patent 5358891 · Granted Oct 25, 1994

Estimated economic value: $40,369,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of manufacturing a semiconductor device using mu2025
Methods for thinning substrates for semiconductor devices2025
Selective etching process for SiGe and doped epitaxial silicon2024
Metallization structures for stacked device connectivity and their methods of fa2024
Metallization structures for stacked device connectivity and their methods of fa2022
Conductive cap-based approaches for conductive via fabrication and structures re2022
Absorber2020
Absorber2017
Method and system for dynamic scaling in a cloud environment2016
Electroless filled conductive structures2015
Filling narrow and high aspect ratio openings with electroless deposition2009
Atomic layer deposited tantalum containing adhesion layer2009