Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby

Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby

US Patent 5352637 · Granted Oct 4, 1994

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Chunk polycrystalline silicon and process for cleaning polycrystalline silicon c2017
Treatment of steel surfaces2016
Apparatus for wetting of grain with a liquid, and method for wetting of grain wi2016
Polycrystalline silicon chunks and method for producing them2016
Chunk polycrystalline silicon and process for cleaning polycrystalline silicon c2015
Polycrystalline silicon portion and method for breaking a silicon body2015
Recycling of high-boiling compounds within an integrated chlorosilane system2013
SOI wafer and method for producing it2012
Doped semiconductor wafer of float zone pulled semiconductor material, and proce2006
Silicon single crystal produced by crucible-free float zone pulling2005
Process for preparing unsaturated organosilicon compounds2004
Preparation of alkylamines2004