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Home › Method for fabricating an AlGaInP semiconductor light emitting device including the step of removing an oxide film by irradiation with plasma beams and an As or P molecular beam

Method for fabricating an AlGaInP semiconductor light emitting device including the step of removing an oxide film by irradiation with plasma beams and an As or P molecular beam

US Patent 5310697 · Granted May 10, 1994

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