Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making CCD having a single level electrode of single crystalline silicon

Method of making CCD having a single level electrode of single crystalline silicon

US Patent 5302544 · Granted Apr 12, 1994

Estimated economic value: $3,080,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Camera, image sensor, and method for decreasing undesirable dark current2011
Two epitaxial layers to reduce crosstalk in an image sensor2010
Image sensor having multiple layers of dielectrics adjacent the photosensitive a2006
Process for making a CMOS image sensor2006
CCD image sensor2002
Method of making self-aligned, high-enegry implanted photodiode for solid-state 2001
Photogenerated carrier collection of a solid state image sensor array1999
Method of performing edge-aligned implants1998
Image sensor with improved output region for superior charge transfer characteri1996
Image sensor with improved output region for superior charge transfer characteri1996
Charge-coupled device having an improved charge-transfer efficiency over a broad1995
Method of making a single electrode level CCD1994