Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for etching improved contact openings to peripheral circuit regions of a dram integrated circuit

Method for etching improved contact openings to peripheral circuit regions of a dram integrated circuit

US Patent 5286677 · Granted Feb 15, 1994

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Embedded component substrate and method for fabricating the same2018
Metal crib bedstead2016
Apparatus and method for sensing distance2014
Connector concealment mechanism for computer peripheral device2006
High contrast, low noise alignment mark for laser trimming of redundant memory a2001
Method for contact anneal in a doped dielectric layer without dopant diffusion p2001
Pattern formation of silicon nitride1999
Method for forming tapered polysilicon plug and plug formed1999
Pattern formation of silicon nitride1999
Method for forming a tapered spacer1999
High contrast, low noise alignment mark for laser trimming of redundant memory a1999