Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor sensor with perpendicular N and P-channel MOSFET's

Semiconductor sensor with perpendicular N and P-channel MOSFET's

US Patent 5281836 · Granted Jan 25, 1994

Estimated economic value: $26,704,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitive electrical conductivity sensor integrated in a water meter2025
Pressure sensor embedded in a metering device2025
Electricity meter having multiple hall devices2018
Electricity meter having multiple hall devices2016
Hall sensor with temperature drift control2012
Hall sensor with temperature drift control2010
Tunable Fabry-Perot filter for determining gas concentration1999
Hall effect sensor1995
Semiconductor flow sensor1994
Method for making a pressure sensor of the semiconductor-on-insulator type1993
Hydrostatic pressure transducer1993
Semiconductor pressure sensor1992