Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High voltage CMOS switch with protection against diffusion to well reverse junction breakdown

High voltage CMOS switch with protection against diffusion to well reverse junction breakdown

US Patent 5243236 · Granted Sep 7, 1993

Estimated economic value: $59,916,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low voltage microelectromechanical RF switch architecture2007
Sigma-delta conversion with analog, nonvolatile trimmed quantized feedback2005
Method and apparatus to perform an analog to digital conversion2003
Method and apparatus for dynamic power control of a low power processor2003
Method and apparatus for dynamic power control of a low power processor2002
Buffer circuit2002
CMOS flash analog to digital converter compensation2001
Integrated circuit low leakage power circuitry for use with an advanced CMOS pro2000
Electronic system with high speed, low power, A/D converter2000
Well to substrate photodiode for use in a CMOS sensor on a salicide process2000
Ultra high speed, low power, flash A/D converter utilizing a current mode regene2000
Method and apparatus for selectively enabling individual sets of registers in a 2000