Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

US Patent 5225031 · Granted Jul 6, 1993

Estimated economic value: $17,187,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structure and method for controlling band offset and alignment at a crystalline 2003
Structure and method for controlling band offset and alignment at a crystalline 2003
Control system for use when growing thin-films on semiconductor-based materials2003
Control system for use when growing thin-films on semiconductor-based materials2003
Control method and system for use when growing thin-films on semiconductor-based2001
Control method and system for use when growing thin-films on semiconductor-based2001
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2001
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2001
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2000
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2000
Silicon-integrated thin-film structure for electro-optic applications2000
Silicon-integrated thin-film structure for electro-optic applications2000