Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Programmable memory cell structure including a refractory metal barrier layer

Programmable memory cell structure including a refractory metal barrier layer

US Patent 5166901 · Granted Nov 24, 1992

Estimated economic value: $13,765,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ground fault interrupter self test circuits and related methods2023
Ground fault interrupter self test circuits and related methods2022
Ground fault circuit interrupter (GFCI) monitor2017
Ground fault circuit interrupter (GFCI) monitor2016
Dimmer control with soft start over-current protection2015
Ground fault circuit interrupter (GFCI) monitor2014
Ground fault circuit interrupter with self test2011
Ferroelectric memory structure1999
Popless amplifier1998
Plastic jack1993
Semiconductor device1990
Semiconductor device1990