Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus for growing a single crystal of a semiconductor compound by using a horizontal zone melt technique

Apparatus for growing a single crystal of a semiconductor compound by using a horizontal zone melt technique

US Patent 5141721 · Granted Aug 25, 1992

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transient sensor using molybdenum disulfide and method of manufacturing the same2025
System and method for foreign object detection in wireless power transfer2025
Negative electrode active material for secondary battery and manufacturing metho2024
Wireless cooperative charging system and method for increasing power receiving e2024
Transient sensor using molybdenum disulfide and method of manufacturing the same2023
Sensor integration based pedestrian detection and pedestrian collision preventio2023
Cathode active material for secondary battery and manufacturing method thereof2023
Active matrix organic light-emitting diode display device and method of manufact2022
Method for preparing silicon-based active material particles for secondary batte2021
Silicon-based active material particles for secondary battery and method for pro2021
Pedestrian collision prevention apparatus and method considering pedestrian gaze2021
Posture information based pedestrian detection and pedestrian collision preventi2020