Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for preparing homogeneous single crystal ternary III-V alloys

Method for preparing homogeneous single crystal ternary III-V alloys

US Patent 5047112 · Granted Sep 10, 1991

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for consolidation of granular silicon and measuring non-met2017
Shallow melt apparatus for semicontinuous czochralski crystal growth2006
Purified silicon production system2004
Purification and deposition of silicon by an iodide disproportionation reaction2002
Process for Polycrystalline film silicon growth2001
Substrate for thin silicon solar cells1998
Crystallization from high temperature solutions of Si in Cu/Al solvent1996
Substrate for thin silicon solar cells1995
Crystallization from high temperature solutions of Si in copper1994
Method and apparatus for forming high-critical-temperature superconducting layer1994
Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthe1988
Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) cryst1987