Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Topographic pattern delineated power MOSFET with profile tailored recessed source

Topographic pattern delineated power MOSFET with profile tailored recessed source

US Patent 5045903 · Granted Sep 3, 1991

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Edge termination for high voltage semiconductor device2012
Process control data collection2007
Nonintrusive wafer marking2004
Cluster tool reporting system2004
Engineering database feedback system2002
Self-aligned power MOSFET device with recessed gate and source1998
Self-aligned power MOSFET device with recessed gate and source1998
Self-aligned power MOSFET device with recessed gate and source1998
Self-aligned power MOSFET device with recessed gate and source1998
High density power device fabrication process using undercut oxide sidewalls1997
High density power device fabrication process using undercut oxide sidewalls1997
High density power device fabrication process using undercut oxide sidewalls1997