Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Epitaxial film growth using low pressure MOCVD

Epitaxial film growth using low pressure MOCVD

US Patent 4994408 · Granted Feb 19, 1991

Estimated economic value: $3,270,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a semiconductor component and semiconductor component th2004
MOCVD-grown emode HIGFET buffer2002
Ionization gas analyzer and method1995
Method for providing impurities into a carrier gas line1988