Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for fabricating self-aligned silicide lightly doped drain MOS devices

Process for fabricating self-aligned silicide lightly doped drain MOS devices

US Patent 4908326 · Granted Mar 13, 1990

Estimated economic value: $1,093,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pill container2025
Method and apparatus for smoothing link-line power of electrothermal microgrid u2022
Hash-chain based sender identification scheme2022
Method and apparatus for extracting a satellite image-based building footprint2021
Chemical liquid thermostat control device2019
Supporting and transferring mechanism and supporting and transferring device2019
Learning lanes from vehicle probes2019
Learning lanes from radar sensors2018
Learning lanes from radar data2017
Learning signs from vehicle probes2016
Internet address information processing method, apparatus, and internet system2015
System and method for reducing temperature variation during burn in2014