Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Doping III-V compound semiconductor devices with group VI monolayers using ALE

Doping III-V compound semiconductor devices with group VI monolayers using ALE

US Patent 4845049 · Granted Jul 4, 1989

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of producing inorganic material and apparatus of producing inorganic mate2024
Group III-V compound semiconductor crystal structure and method of epitaxial gro2004
Method for manufacturing group III-V compound semiconductors2003
Method for manufacturing group III-V compound semiconductors2002
GaN crystal film, a group III element nitride semiconductor wafer and a manufact2001
Method of crystal growth of a GaN layer over a GaAs substrate2000
Crystal growth method for gallium nitride films1998
Heterostructure III-V nitride semiconductor device including InP substrate1998
Group VI doping of III-V semiconductors during ALE1989