Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process of self aligned nitridation of TiSi.sub.2 to form TiN/TiSi.sub.2 contact

Process of self aligned nitridation of TiSi.sub.2 to form TiN/TiSi.sub.2 contact

US Patent 4772571 · Granted Sep 20, 1988

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a bipolar transistor1991
Method of manufacturing a bipolar transistor1991
Method of fabricating a bi-CMOS device1990
Process for forming isolation trenches in silicon semiconductor bodies1990
Semiconductor devices1990
Semiconductor devices1990
Method of making Bicmos devices1990
Semiconductor devices1989
Semiconductor devices1989
Method for making bipolar transistors using rapid thermal annealing1988
Method of making a self-aligned bipolar transistor with composite masking1988
Method of making a self-aligned bipolar transistor with composite masking1988