Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon-on-sapphire integrated circuits

Silicon-on-sapphire integrated circuits

US Patent 4735917 · Granted Apr 5, 1988

Estimated economic value: $10,642,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuit with stacked MOS field effect transistors1991
Method of making a MOS transistor1990
Radiation hardened integrated circuit and method of making the same1989
Silicon-on-sapphire integrated circuit and method of making the same1988
Method of forming a semiconductor structure1988
Semiconductor device with internal gettering region1987
Method of making a resistor1987
Method of forming multi-level metallization1987
Method of forming a semiconductor structure1987
Profile control of boron implant1987
Process for tapering openings in ternary glass coatings1982
Method of making radiation resistant MOS transistor1981