{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method for making germanium/gallium arsenide high mobility complementary logic transistors", "item": "https://www.patentleaderboard.com/patent/4710478"}]}
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Home › Method for making germanium/gallium arsenide high mobility complementary logic transistors

Method for making germanium/gallium arsenide high mobility complementary logic transistors

US Patent 4710478 · Granted Dec 1, 1987

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