Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming channel stops in vertical semiconductor surfaces

Method for forming channel stops in vertical semiconductor surfaces

US Patent 4666557 · Granted May 19, 1987

Estimated economic value: $19,804,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Time of flight sensor binning2017
System and methods for plasma application2016
Plasma-based chemical source device and method of use thereof2016
Real-time arc control in electrosurgical generators2016
Liquid-gas interface plasma device2016
System and method for treatment of biofilms2016
System and method of matching impedances of an electrosurgical generator and/or 2015
Time of flight sensor binning2015
Plasma catalyst chemical reaction apparatus2015
Microwave and RF ablation system and related method for dynamic impedance matchi2015
Liquid-gas interface plasma device2015
System and methods for plasma application2015