Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Electrically-programmable and electrically-erasable MOS memory device

Electrically-programmable and electrically-erasable MOS memory device

US Patent 4558344 · Granted Dec 10, 1985

Estimated economic value: $1,081,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fault-tolerant memory array1988
Non-volatile memory cell fuse element1985
Enabling circuit for redundant word lines in a semiconductor memory array1985
Sense amplifier for use with a semiconductor memory array1985
Method of making EPROM cell with reduced programming voltage1985
Electrical partitioning scheme for improving yields during the manufacture of se1984
EPROM Cell with reduced programming voltage and method of fabrication1983
Electrically alterable read-mostly memory1981
MOS Static decoding circuit1981
Sensing amplifier for floating gate memory devices1980
Electrically programmable and erasable MOS floating gate memory device employing1980