Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of preparing single crystalline cubic silicon carbide layers

Method of preparing single crystalline cubic silicon carbide layers

US Patent 4556436 · Granted Dec 3, 1985

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming silicon carbide films on tantalum containing substrates1988
Liquid phase epitaxy (LPE) of silicon carbide1986
Chemical vapor deposition (CVD) of cubic silicon carbide SiC1986
Recovery of fragile layers produced on substrates by chemical vapor deposition1985
Luminescent hafnia composition1981