Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure of stacked, complementary MOS field effect transistor circuits

Structure of stacked, complementary MOS field effect transistor circuits

US Patent 4555721 · Granted Nov 26, 1985

Estimated economic value: $17,522,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Slow drain and congestion spreading detection service2024
Three dimensional (3D) memories with multiple resistive change elements per cell2024
Three dimensional (3D) memories with multiple resistive change elements per cell2023
Electrostatic discharge protection devices using carbon-based diodes2022
Nonvolatile nanotube switch elements using sidewall contacts2021
Methods for accessing 1-R resistive change element arrays2021
Methods for programing DDR compatible open architecture resistive change element2021
Nonvolatile nanotube switches with reduced switching voltages and currents2021
Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell se2020
Resistive change element arrays using a reference line2020
Methods of making sealed resistive change elements2020
Logic elements comprising carbon nanotube field effect transistor (CNTFET) devic2020