Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making a gallium arsenide field effect transistor

Method of making a gallium arsenide field effect transistor

US Patent 4545109 · Granted Oct 8, 1985

Estimated economic value: $3,523,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for mounting and dismounting a telematics unit, telematics unit and modul2024
Device and method for coating a substrate using CVD2016
Device and method for coating a substrate using CVD2015
Safety device for a number of electrical loads2002
Electrical connector, particularly for braking control unit1992
Low resistance gallium arsenide field effect transistor1987
Monolithic integrated circuit interconnection and fabrication method1983
Method for forming a narrow thin film line1982
Method of making a Schottky barrier field effect transistor1981
Semiconductor device having grid for plating contacts1980