Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

US Patent 4508609 · Granted Apr 2, 1985

Estimated economic value: $12,572,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High efficiency ultraviolet light emitting diode with electron tunnelling2023
Ultraviolet light emitting diode structures and methods of manufacturing the sam2022
Ultraviolet light emitting diode structures and methods of manufacturing the sam2020
High efficiency ultraviolet light emitting diode with band structure potential f2020
Ultraviolet light emitting diodes2019
Ultraviolet light emitting diode structures and methods of manufacturing the sam2017
High efficiency ultraviolet light emitting diode with band structure potential f2017
Ultraviolet light emitting diode structures and methods of manufacturing the sam2016
Ultraviolet light emitting diode structures and methods of manufacturing the sam2015
Ultraviolet light emitting diode structures and methods of manufacturing the sam2014
Optical devices featuring nonpolar textured semiconductor layers2013
Planarization of GaN by photoresist technique using an inductively coupled plasm2012