Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for forming an improved silicon-on-sapphire device

Process for forming an improved silicon-on-sapphire device

US Patent 4496418 · Granted Jan 29, 1985

Estimated economic value: $3,678,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrity tester for parallel signal bus2002
SCSI bus extender utilizing tagged queuing in a multi-initiator environment2001
Method and apparatus for resolving over lapping selection and reselection operat1999
Apparatus for increasing SCSI bus length through special transmission of only tw1998
Apparatus for increasing SCSI bus length by increasing the signal propogation ve1996
Optical measurements of fine line parameters in integrated circuit processes1983
Semiconductor-on-insulator device and method for its manufacture1981
Method for cracking and separating pellets formed on a wafer1981
Method for cleaning and drying semiconductors1980