Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits

Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits

US Patent 4418470 · Granted Dec 6, 1983

Estimated economic value: $14,774,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process for making air bridges for integrated circuits1995
Method and apparatus for cleaving a semiconductor wafer into individual die and 1994
Electronically reconfigurable digital pad attenuator using segmented field effec1991
Lumped element digital phase shifter bit1991
Signal scaling MESFET of a segmented dual gate design1988
Digitally controlled wideband phase shifter1987
Continuously variable phase shifting element comprised of interdigitated electro1986
Digital phase bit for microwave operation1984
Ultrasonic transducer fabricated as an integral part of a monolithic integrated 1984
Method of making silicon-on-sapphire FET1983
Process for forming low-reactance interconnections on semiconductors1981
Process for forming low-reactance interconnections on semiconductors1981