Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating semiconductor devices using laser annealing

Method of fabricating semiconductor devices using laser annealing

US Patent 4415383 · Granted Nov 15, 1983

Estimated economic value: $10,149,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming a copper topped interconnect structure that has thin and thick2012
Growth of group III nitride-based structures and integration with conventional C2012
Method of forming a copper-compatible fuse target2012
Engineered structure for solid-state light emitters2012
Engineered structure for high brightness solid-state light emitters2012
Copper-compatible fuse target2011
Fuse target and method of forming the fuse target in a copper process flow2011
Pixel structure for a solid state light emitting device2011
Stacked die structure with an underlying copper-topped die2010
Pixel structure for a solid state light emitting device2010
Copper-topped interconnect structure that has thin and thick copper traces and m2010
Carbon passivation in solid-state light emitters2010