Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction

Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction

US Patent 4390889 · Granted Jun 28, 1983

Estimated economic value: $20,928,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cascaded-mode resonators2025
Compact metalens depth sensors2025
Endoscopic imaging using nanoscale metasurfaces2025
Polarization state generation with a metasurface2025
Wavelength multiplexer/demultiplexer using metamaterials for optical fiber commu2025
Spin-to-orbital angular momentum converter for light2025
Optical metasurface films2025
Broadband achromatic polarization-insensitive metalens with anisotropic nanostru2025
Mode multiplexer/demultiplexer using metamaterials for optical communication sys2024
Arbitrary polarization-switchable metasurfaces2024
Systems and methods for parallel polarization analysis2024
Metasurface optical components for altering incident light2024