Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering

Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering

US Patent 4373966 · Granted Feb 15, 1983

Estimated economic value: $22,370,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Front pillar panel assembly structure of a vehicle2004
Reinforcement structure for cowl side portion of automobiles2001
Novel technique to detect oxydonor generation in IC fabrication1989
Signature analysis technique for defect characterization of CMOS static RAM cell1989
Self aligned schottky guard ring1981