Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Sapphire single crystal substrate consisting essentially of Ga.sub.2 O.sub. 3

Sapphire single crystal substrate consisting essentially of Ga.sub.2 O.sub. 3

US Patent 4333989 · Granted Jun 8, 1982

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electromagnetic wave applicator2011
Electromagnetic wave generating device2009
Short channel insulated-gate static induction transistor and method of manufactu2005
High-speed and high-density semiconductor memory1999
High-speed and high-density semiconductor memory1998
Field effect transistor having saturated drain current characteristic1996
Field effect transistor having unsaturated drain current characteristic1996
Short channel mosfet with buried anti-punch through region1996
Semiconductor device comprising a highspeed static induction transistor1996
Apparatus for epitaxially growing a chemical compound crystal1996
Dry etching method1996
Semiconductor device and method of manufacturing same1996