Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Breakdown voltage resistor obtained through a double ion-implantation into a semiconductor substrate, and manufacturing process of the same

Breakdown voltage resistor obtained through a double ion-implantation into a semiconductor substrate, and manufacturing process of the same

US Patent 4298401 · Granted Nov 3, 1981

Estimated economic value: $12,735,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-referenced current switch logic circuit with a push-pull output buffer1992
BICMOS logic circuit with full swing operation1991
Monolithic autobiased resistor structure and application thereof to interface ci1986
True/complement generator employing feedback circuit means for controlling the s1985
System for compensating the offset voltage of a differential amplifier1983
High density integrated read-only memory1983
Circuit including at least two MTL semi-conducting devices showing different ris1982
Interface circuit in conformity with EIA standards and implemented with an opera1982
Semiconductor integrated injection logic structure controlled by the injector1981
Arrangement for correcting the voltage coefficient of resistance of resistors in1981
Arrangement for correcting the voltage coefficient of resistance of resistors in1981