Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for direct thermal nitridation of silicon semiconductor devices

Process for direct thermal nitridation of silicon semiconductor devices

US Patent 4277320 · Granted Jul 7, 1981

Estimated economic value: $6,496,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for reducing the curvature in boron-doped silicon micromachined structur2005
Methods for reducing the curvature in boron-doped silicon micromachined structur2005
Methods for reducing the curvature in boron-doped silicon micromachined structur2003
Interferometer alignment control apparatus1992
Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junc1984
Low temperature microwave annealing of semiconductor devices1981
Fabrication of a nonvolatile memory array device1981
Fabrication of a nonvolatile memory array device1981