Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Two-phase continuous poly silicon gate CCD

Two-phase continuous poly silicon gate CCD

US Patent 4222165 · Granted Sep 16, 1980

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Interactive voice response using a cloud-based service2021
Interactive voice response using a cloud-based service2019
Charge coupled device with high speed input and output1981
Process of forming a semiconductor memory cell with continuous polysilicon run c1980
Serial-parallel-loop CCD register1980
Sense line termination circuit for semiconductor memory systems1980