Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor with merged epitaxy backside cut and method

Field effect transistor with merged epitaxy backside cut and method

US Patent 12501660 · Granted Dec 16, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-gate device and related methods2025
Semiconductor devices and methods of fabrication thereof2025
Semiconductor device and method2025
Semiconductor structure having biosensor and manufacturing method thereof2025
Recessed light2025
Method and device for boosting performance of FinFETs via strained spacer2025
Method of manufacturing a semiconductor device including forming a sidewall spac2025
Method (and related apparatus) for forming a semiconductor device with reduced s2025
Sliding frame2025
Semiconductor device and manufacturing method thereof2025
Dielectric liner for field effect transistors2025
Integrated circuits with gate cut features2025