Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOS-based power semiconductor device having increased current carrying area and method of fabricating same

MOS-based power semiconductor device having increased current carrying area and method of fabricating same

US Patent 12484268 · Granted Nov 25, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Junction field-effect transistors implemented in a wide bandgap semiconductor ma2025
Buried field shield in III-V compound semiconductor trench MOSFETs via etch and 2025
Methods of reducing the electrical and thermal resistance of SiC substrates and 2024
MOS-based power semiconductor device having increased current carrying area and 2024
Counter-doped silicon carbide Schottky barrier diode2023
Counter-doped silicon carbide Schottky barrier diode2023
Counter-doped silicon carbide Schottky barrier diode2022
MOS-based power semiconductor device having increased current carrying area and 2021
Methods of reducing the electrical and thermal resistance of SiC substrates and 2020
Methods of reducing the electrical and thermal resistance of SiC substrates and 2019
MOS-based power semiconductor device having increased current carrying area and 2019
Engine oil cooler backflush valve assembly2019