Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process

Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process

US Patent 12464773 · Granted Nov 4, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices including backside power via and methods of forming the sa2025
Semiconductor device and method of forming the same2025
Semiconductor device and method of forming the same2025
Transistor gate structures and methods of forming the same2025
Transistor gate structures and methods of forming the same2025
Method of manufacturing semiconductor devices and semiconductor devices2025
Semiconductor device and method of fabricating the same2025
Semiconductor device and method of fabricating the same2025
Nanostructure field-effect transistor device and method of forming2025
Hardmask formation with hybrid materials in semiconductor device2025
Methods of forming semiconductor devices2025
Dummy Fin structures and methods of forming same2025