Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming shaped source/drain epitaxial layers of a semiconductor device

Method of forming shaped source/drain epitaxial layers of a semiconductor device

US Patent 12464752 · Granted Nov 4, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Apparatus and method for use with a substrate chamber2025
Apparatus and method for use with a substrate chamber2025
Confined source/drain epitaxy regions and method forming same2025
Electromagnetic field simulation method based on face-centered cubic and subgrid2025
Drinking cup2025
Lighting or signaling device and motor vehicle2023
Terahertz gas spectrometer detection system2023
Diglycosylated benzophenoxazine photosensitizer and preparation method and use t2022