Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › 2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method

2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method

US Patent 12457840 · Granted Oct 28, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Complementary semiconductor devices using halide perovskite thin films2025
Semiconductor substrate grinding apparatus for simultaneous grinding and polishi2025
Display apparatus and method of manufacturing the same2025