Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming continuous line-end to line-end spaces with spacer assisted lithography-etch-lithography etch processes

Method for forming continuous line-end to line-end spaces with spacer assisted lithography-etch-lithography etch processes

US Patent 12455505 · Granted Oct 28, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Providing data storage resiliency2025
Creating and using multiple flush working sets in a data storage system2025
Litho-etch-litho-etch with self-aligned blocks2022
Method for calculating non-correctable EUV blank flatness for blank dispositioni2020
Medical device system and a method for locating medical devices and mobile contr2019
Registration mark formation during sidewall image transfer process2019
Registration mark formation during sidewall image transfer process2018
Medical control systems2018
Registration mark formation during sidewall image transfer process2018
Registration mark formation during sidewall image transfer process2016
Alignment data based process control system2016
Method for monitoring focus on an integrated wafer2015