Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor manufacturing method using sacrificial layer etching for doping concentration reduction

Semiconductor manufacturing method using sacrificial layer etching for doping concentration reduction

US Patent 12451349 · Granted Oct 21, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Graphite disc2025
Schottky diode and manufacturing method thereof2025
Patterned substrate, semiconductor device and nanotube structure2025
Light emitting device and method for manufacturing the same, terminal device2025
Full-color LED epitaxial structure2025
Enhanced semiconductor structures and manufacturing methods thereof2025
N-face polar GaN-based device and composite substrate thereof, and method of man2025
Semiconductor structure and manufacturing method thereof2025
Full-color LED structure, and full-color LED structure unit and method for manuf2025
Semiconductor structures and methods of manufacturing the same2025
Method for preparing a substrate2025
Semiconductor structures2025