Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for depositing a silicon germanium layer on a substrate

Method for depositing a silicon germanium layer on a substrate

US Patent 12437989 · Granted Oct 7, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing semiconductor wafers2025
Net assembly for a vehicle2022
Control method and system in a refrigeration system and compressor of a refriger2022
Shelf arrangement for a vehicle2021
Layered semiconductor substrate with reduced bow having a group III nitride laye2019
Semiconductor wafer and a method for producing the semiconductor wafer2018
Epitaxial wafer and a method of manufacturing thereof2017
SOI wafers having MxOy oxide layers on a substrate wafer and an amorphous interl2012
Semiconductor wafer with a heteroepitaxial layer and a method for producing the 2012
Method for producing a wafer comprising a silicon single crystal substrate havin2012
Semiconductor wafer and process for its production2010
Multilayer structure comprising a substrate and a layer of silicon and germanium2010