Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Delayed select gate ramp-up for peak read current consumption reduction for non-volatile memory apparatus

Delayed select gate ramp-up for peak read current consumption reduction for non-volatile memory apparatus

US Patent 12437815 · Granted Oct 7, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

In-place refresh techniques for non-volatile memory devices2025
Programming techniques to improve erase state upper tails in a memory device2025
Plane and block location dependent voltage biases in NAND memory2025
Plane and block location dependent voltage biases in NAND memory2025
Methods to improve current consumption and read time in successive reads2025
Methods to improve current consumption and read time in successive reads2025
Variable foggy verify levels for selected checkpoint states for non-volatile mem2025
Loop dependent bit line and read biases in a memory device2025
Loop dependent bit line and read biases in a memory device2025
Generation of quick pass write biases in a memory device2025
Generation of quick pass write biases in a memory device2025
Real time ramp rate adjustment for better performance and current consumption tr2025