Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT

Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT

US Patent 12426507 · Granted Sep 23, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing a stacked structure2025
Membrane transfer method2025
Method for producing a monocrystalline layer of lithium niobate by transferring 2025
Method for the production of a single-crystal film, in particular piezoelectric2025
Method for sealing cavities using membranes2025
Methods for designing and producing a device comprising an array of micro-machin2024
Method for transferring blocks from a donor substrate onto a receiver substrate 2024
Method for manufacturing a film on a support having a non-flat surface2024
Process for producing a monoocrystalline layer of AlN material by transferring a2024
Method for manufacturing a film on a flexible sheet2024
Method for manufacturing a monocrystalline layer of GaAs material and substrate 2024
Method for manufacturing a device comprising a membrane extending over a cavity2024