Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ultra-low-voltage static random access memory (SRAM) cell for eliminating half-select disturbance under bit interleaving structure

Ultra-low-voltage static random access memory (SRAM) cell for eliminating half-select disturbance under bit interleaving structure

US Patent 12412624 · Granted Sep 9, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Polyolefin compositions for photovoltaic encapsulant films2025
PV module with film layer comprising hydrophilic fumed silica2025
Global registration method based on spherical harmonic transformation (SHT) and 2025
Energy-efficient memory for cryogenic computing2025
Mobile phone2025
Testing device and method for service life of refrigeration compressor of new en2025
Door lock mechanism2025
Near-IR emulator for complex electromagnetic structures2025
Semi-physical simulation verification method for control strategy of distributed2025
Door lock2025
Door lock2025
Door lock2025