Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process method for fabricating a three-dimensional source contact structure

Process method for fabricating a three-dimensional source contact structure

US Patent 12408372 · Granted Sep 2, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate fabrication method of an U-metal-oxide-semiconductor field-effect transisto2025
Gate fabrication method of an U-metal-oxide-semiconductor field-effect transisto2025
Method for reducing parasitic junction field effect transistor resistance2025
Method of processing a substrate2025
Source-body self-aligned method of a vertical double diffused metal oxide semico2025
Source-body self-aligned method of a vertical double diffused metal oxide semico2025
Method for increasing an oxide thickness at trench corner of an U-shaped gate me2022
Semiconductor structure of trench transistors and manufacturing method thereof2022
Enhanced tunnel field effect transistor2014
Method of fabricating metal oxide semiconductor device2009
Metal oxide semiconductor device2008
Method of fabricating metal oxide semiconductor device2007