Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including dielectric insert structure directly under buried word line and method for forming the same

Semiconductor device including dielectric insert structure directly under buried word line and method for forming the same

US Patent 12394714 · Granted Aug 19, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of fabricating the same2025
Semiconductor memory device comprises a bit line having a plurality of pins exte2025
Semiconductor device and fabricating method thereof2025
Semiconductor structure and method for forming the same2025
Semiconductor device and method of fabricating the same2025
Semiconductor device and method of fabricating the same2025
Semiconductor structure, method for fabricating thereof, and method for fabricat2025
Semiconductor structure and method of manufacturing the same2025
Semiconductor structure and method of manufacturing the same2025
Semiconductor memory device and method of fabricating the same2025
Semiconductor memory device and method of fabricating the same2025
Semiconductor memory device having buried word line with a neck profile portion2025